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| Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V ID (mA) 600 500 350 FEATURES D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 G 1 Ordering Information: SC-75A (SOT- 416): Si1012R-Marking Code : C SC-89 (SOT- 490): SI1012X-Marking Code: A Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b _ Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 TA = 25_C TA = 85_C TA = 25_C for SC-89 TA = 85_C TJ, Tstg ESD PD TA = 25_C TA = 85_C IDM IS 275 175 90 275 160 -55 to 150 2000 Symbol VDS VGS 5 secs 20 Steady State Unit V "6 600 500 350 1000 250 150 80 250 140 ID 400 mA mW Maximum Power Dissipationb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board. Document Number: 71166 S-02464--Rev. A, 25-Oct-00 _C V www.vishay.com 1 Si1012R/X Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 500 m A VGS = 1.8 V, ID = 350 m A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 400 mA IS = 150 mA, VGS = 0 V 700 0.41 0.53 0.70 1.0 0.8 1.2 0.70 0.85 1.25 S V W 0.45 "0.5 0.3 "1.0 100 5 V mA nA mA mA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W VDS = 10 V, VGS = 4.5 V, ID = 250 mA 750 75 225 5 5 25 11 ns pC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 1.0 1200 Transfer Characteristics TC = -55_C 0.8 I D - Drain Current (A) 1000 ID - Drain Current (mA) VGS = 5 thru 1.8 V 25_C 800 125_C 600 0.6 0.4 400 0.2 1V 0.0 0.0 200 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71166 S-02464--Rev. A, 25-Oct-00 Si1012R/X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current 4.0 r DS(on) - On-Resistance ( W ) 100 Vishay Siliconix Capacitance C - Capacitance (pF) 3.2 80 Ciss 60 2.4 1.6 VGS = 1.8 V 0.8 VGS = 2.5 V VGS = 4.5 V 0.0 0 200 400 600 800 1000 40 Coss 20 0 0 Crss 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 1.60 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) 1.40 VGS = 4.5 V ID = 600 mA 3 1.20 VGS = 1.8 V ID = 350 mA 1.00 2 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 -50 -25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1000 TJ = 125_C r DS(on) - On-Resistance ( W ) I S - Source Current (mA) 4 5 On-Resistance vs. Gate-to-Source Voltage ID = 350 mA 3 ID = 200 mA 2 100 TJ = 25_C 10 TJ = -55_C 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71166 S-02464--Rev. A, 25-Oct-00 www.vishay.com 3 Si1012R/X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (mA) 2.5 2.0 -0.0 1.5 -0.1 1.0 VGS = 4.5 V -0.2 0.5 -0.3 -50 -25 0 25 50 75 100 125 0.0 -50 -25 0 25 50 75 100 125 TJ - Temperature (_C) TJ - Temperature (_C) BVGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 833_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71166 S-02464--Rev. A, 25-Oct-00 Si1012R/X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71166 S-02464--Rev. A, 25-Oct-00 www.vishay.com 5 |
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